Broadband Silicon Absorber of Terahertz Radiation

Broadband Silicon Absorber of Terahertz Radiation

— A three-layer structure is fabricated on a low-resistance silicon substrate using plasma chemical etching. We study it experimentally and show that a substrate with such a structure can be used as an absorber of terahertz (THz) radiation in the frequency range of 0.5−2.0 THz. For this structure, a...

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Veröffentlicht in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2019-11, Vol.13 (6), p.1302-1305
Hauptverfasser: Pavelyev, V. S., Tukmakov, K. N., Reshetnikov, A. S., Tsibizov, I. A., Kropotov, G. I.
Format: Artikel
Sprache:eng
Schlagworte:
Absorbers
Broadband
Chemical etching
Chemistry and Materials Science
Frequency ranges
Materials Science
Organic chemistry
Silicon substrates
Surfaces and Interfaces
Thin Films
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Beschreibung
Zusammenfassung:— A three-layer structure is fabricated on a low-resistance silicon substrate using plasma chemical etching. We study it experimentally and show that a substrate with such a structure can be used as an absorber of terahertz (THz) radiation in the frequency range of 0.5−2.0 THz. For this structure, absorbance in the indicated frequency range is measured to be more than 95%.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451019060466