A 24-MB Embedded Flash System Based on 28-nm SG-MONOS Featuring 240-MHz Read Operations and Robust Over-the-Air Software Update for Automotive Applications

This letter presents an embedded flash (eFlash) system based on 28-nm split-gate MONOS (SG-MONOS) with high- {k} metal gate CMOS process technology for automotive applications. It contains the world's largest 24-MB memory capacity (4-MB code flash macro (CF) \times6 ) and achieves 240-MHz ran...

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Veröffentlicht in:	IEEE solid-state circuits letters 2019-12, Vol.2 (12), p.273-276
Hauptverfasser:	Kanda, Akihiko, Kono, Takashi, Kurafuji, Takashi, Takeda, Koichi, Ogawa, Tomoya, Taito, Yasuhiko, Yoshihara, Kazuo, Nakano, Masaya, Ito, Takashi, Kondo, Hiroyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applications programs CMOS Dielectric breakdown Embedded flash (eFlash) memory Embedded systems Flash memories Flash memory (computers) high-speed read low-noise program Memory management Noise measurement over-the-air software update (OTA) Software split-gate MONOS (SG-MONOS) time dependent dielectric breakdown (TDDB) Upgrading
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