A 24-MB Embedded Flash System Based on 28-nm SG-MONOS Featuring 240-MHz Read Operations and Robust Over-the-Air Software Update for Automotive Applications

This letter presents an embedded flash (eFlash) system based on 28-nm split-gate MONOS (SG-MONOS) with high- {k} metal gate CMOS process technology for automotive applications. It contains the world's largest 24-MB memory capacity (4-MB code flash macro (CF) \times6 ) and achieves 240-MHz ran...

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Veröffentlicht in:IEEE solid-state circuits letters 2019-12, Vol.2 (12), p.273-276
Hauptverfasser: Kanda, Akihiko, Kono, Takashi, Kurafuji, Takashi, Takeda, Koichi, Ogawa, Tomoya, Taito, Yasuhiko, Yoshihara, Kazuo, Nakano, Masaya, Ito, Takashi, Kondo, Hiroyuki
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Sprache:eng
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Zusammenfassung:This letter presents an embedded flash (eFlash) system based on 28-nm split-gate MONOS (SG-MONOS) with high- {k} metal gate CMOS process technology for automotive applications. It contains the world's largest 24-MB memory capacity (4-MB code flash macro (CF) \times6 ) and achieves 240-MHz random read access at Tj from −40 °C to 170 °C, and read throughput reaches 46 GB/s by reading 6 CFs in parallel. The peak current consumption during over-the-air software update (OTA) is reduced by 55% in low-noise program mode. A high-speed program mode for factory program and test achieves 6.5-MB/s program throughput by programming 2 CFs in parallel. In OTA, the eFlash system realizes ~1 ms software switching and robustness against unintentional OTA termination.
ISSN:2573-9603
2573-9603
DOI:10.1109/LSSC.2019.2948813