A 24-MB Embedded Flash System Based on 28-nm SG-MONOS Featuring 240-MHz Read Operations and Robust Over-the-Air Software Update for Automotive Applications
This letter presents an embedded flash (eFlash) system based on 28-nm split-gate MONOS (SG-MONOS) with high- {k} metal gate CMOS process technology for automotive applications. It contains the world's largest 24-MB memory capacity (4-MB code flash macro (CF) \times6 ) and achieves 240-MHz ran...
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| Veröffentlicht in: | IEEE solid-state circuits letters 2019-12, Vol.2 (12), p.273-276 |
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| creator | Kanda, Akihiko Kono, Takashi Kurafuji, Takashi Takeda, Koichi Ogawa, Tomoya Taito, Yasuhiko Yoshihara, Kazuo Nakano, Masaya Ito, Takashi Kondo, Hiroyuki |
| description | This letter presents an embedded flash (eFlash) system based on 28-nm split-gate MONOS (SG-MONOS) with high- {k} metal gate CMOS process technology for automotive applications. It contains the world's largest 24-MB memory capacity (4-MB code flash macro (CF) \times6 ) and achieves 240-MHz random read access at Tj from −40 °C to 170 °C, and read throughput reaches 46 GB/s by reading 6 CFs in parallel. The peak current consumption during over-the-air software update (OTA) is reduced by 55% in low-noise program mode. A high-speed program mode for factory program and test achieves 6.5-MB/s program throughput by programming 2 CFs in parallel. In OTA, the eFlash system realizes ~1 ms software switching and robustness against unintentional OTA termination. |
| doi_str_mv | 10.1109/LSSC.2019.2948813 |
| format | Article |
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It contains the world's largest 24-MB memory capacity (4-MB code flash macro (CF) <inline-formula> <tex-math notation="LaTeX">\times6 </tex-math></inline-formula>) and achieves 240-MHz random read access at Tj from −40 °C to 170 °C, and read throughput reaches 46 GB/s by reading 6 CFs in parallel. The peak current consumption during over-the-air software update (OTA) is reduced by 55% in low-noise program mode. A high-speed program mode for factory program and test achieves 6.5-MB/s program throughput by programming 2 CFs in parallel. In OTA, the eFlash system realizes ~1 ms software switching and robustness against unintentional OTA termination.]]></description><identifier>ISSN: 2573-9603</identifier><identifier>EISSN: 2573-9603</identifier><identifier>DOI: 10.1109/LSSC.2019.2948813</identifier><identifier>CODEN: ISCLCN</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Applications programs ; CMOS ; Dielectric breakdown ; Embedded flash (eFlash) memory ; Embedded systems ; Flash memories ; Flash memory (computers) ; high-speed read ; low-noise program ; Memory management ; Noise measurement ; over-the-air software update (OTA) ; Software ; split-gate MONOS (SG-MONOS) ; time dependent dielectric breakdown (TDDB) ; Upgrading</subject><ispartof>IEEE solid-state circuits letters, 2019-12, Vol.2 (12), p.273-276</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-8c3352f94e8bd249ecdf33b5abf89047a7777d799b306e5d802846363c2318333</citedby><cites>FETCH-LOGICAL-c293t-8c3352f94e8bd249ecdf33b5abf89047a7777d799b306e5d802846363c2318333</cites><orcidid>0000-0003-2699-531X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8879506$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8879506$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kanda, Akihiko</creatorcontrib><creatorcontrib>Kono, Takashi</creatorcontrib><creatorcontrib>Kurafuji, Takashi</creatorcontrib><creatorcontrib>Takeda, Koichi</creatorcontrib><creatorcontrib>Ogawa, Tomoya</creatorcontrib><creatorcontrib>Taito, Yasuhiko</creatorcontrib><creatorcontrib>Yoshihara, Kazuo</creatorcontrib><creatorcontrib>Nakano, Masaya</creatorcontrib><creatorcontrib>Ito, Takashi</creatorcontrib><creatorcontrib>Kondo, Hiroyuki</creatorcontrib><title>A 24-MB Embedded Flash System Based on 28-nm SG-MONOS Featuring 240-MHz Read Operations and Robust Over-the-Air Software Update for Automotive Applications</title><title>IEEE solid-state circuits letters</title><addtitle>LSSC</addtitle><description><![CDATA[This letter presents an embedded flash (eFlash) system based on 28-nm split-gate MONOS (SG-MONOS) with high-<inline-formula> <tex-math notation="LaTeX">{k} </tex-math></inline-formula> metal gate CMOS process technology for automotive applications. It contains the world's largest 24-MB memory capacity (4-MB code flash macro (CF) <inline-formula> <tex-math notation="LaTeX">\times6 </tex-math></inline-formula>) and achieves 240-MHz random read access at Tj from −40 °C to 170 °C, and read throughput reaches 46 GB/s by reading 6 CFs in parallel. The peak current consumption during over-the-air software update (OTA) is reduced by 55% in low-noise program mode. A high-speed program mode for factory program and test achieves 6.5-MB/s program throughput by programming 2 CFs in parallel. In OTA, the eFlash system realizes ~1 ms software switching and robustness against unintentional OTA termination.]]></description><subject>Applications programs</subject><subject>CMOS</subject><subject>Dielectric breakdown</subject><subject>Embedded flash (eFlash) memory</subject><subject>Embedded systems</subject><subject>Flash memories</subject><subject>Flash memory (computers)</subject><subject>high-speed read</subject><subject>low-noise program</subject><subject>Memory management</subject><subject>Noise measurement</subject><subject>over-the-air software update (OTA)</subject><subject>Software</subject><subject>split-gate MONOS (SG-MONOS)</subject><subject>time dependent dielectric breakdown (TDDB)</subject><subject>Upgrading</subject><issn>2573-9603</issn><issn>2573-9603</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkc9q3DAQh0VpoGGTByi9CHrWRtL4j3R0lmxS2K0hTs5GtsaNw9pyJTklfZW8bL1sCJ3LDMP3mzl8hHwVfC0E11e7qtqsJRd6LXWilIBP5FymOTCdcfj83_yFXIbwzPmCigy4OidvBZUJ21_Tm6FBa9HS7cGEJ1q9hogDvTZhWbmRSsXGgVa3bF_-LCu6RRNn34-_ljRn-7u_9B6NpeWE3sTejYGa0dJ718wh0vIFPYtPyIre08p18Y_xSB8nayLSznlazNENLvYvSItpOvTt6cYFOevMIeDle1-Rx-3Nw-aO7crbH5tix1qpITLVAqSy0wmqxspEY2s7gCY1Tac0T3KTL2VzrRvgGaZWcamSDDJoJQgFACvy_XR38u73jCHWz2724_KylgCcy0Qs3IqIE9V6F4LHrp58Pxj_WgteHzXURw31UUP9rmHJfDtlekT84JXKdcoz-AfQu4DF</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Kanda, Akihiko</creator><creator>Kono, Takashi</creator><creator>Kurafuji, Takashi</creator><creator>Takeda, Koichi</creator><creator>Ogawa, Tomoya</creator><creator>Taito, Yasuhiko</creator><creator>Yoshihara, Kazuo</creator><creator>Nakano, Masaya</creator><creator>Ito, Takashi</creator><creator>Kondo, Hiroyuki</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Applications programs CMOS Dielectric breakdown Embedded flash (eFlash) memory Embedded systems Flash memories Flash memory (computers) high-speed read low-noise program Memory management Noise measurement over-the-air software update (OTA) Software split-gate MONOS (SG-MONOS) time dependent dielectric breakdown (TDDB) Upgrading |
| title | A 24-MB Embedded Flash System Based on 28-nm SG-MONOS Featuring 240-MHz Read Operations and Robust Over-the-Air Software Update for Automotive Applications |
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