Towards high-efficiency industrial p-type mono-like Si PERC solar cells

The cast-grown monocrystalline-like silicon (mono-like Si) technology has been reactivated recently for the manufacture of high-efficiency solar cells at low cost. In this paper, we have provided a progressive research, both experimentally and theoretically, to improve the efficiency of mono-like Si passivated emitter and rear cells (PERCs) through production lines. By employing rear surface passivation of AlOx/triple-SiNx:H layers, the average efficiency has increased to 21.87% with a champion efficiency of 22.32% from the standard mono-like Si PERCs of 21.72% efficiency with AlOx capped with double-SiNx:H layers. We have further optimized the rear electrode contact patterns and introduced the selective emitter (SE) technology, yielding an absolute efficiency improvement of 0.19% and 0.26%, respectively. Integrating all approaches of the triple-SiNx:H, rear contact pattern optimization and SE technology, we have demonstrated that the mono-like Si PERCs can reach the average efficiency of 22.2% with a maximum efficiency of 22.5%, similar to the current Czochralski monocrystalline Si counterparts.