Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications
A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping v...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019-12, Vol.53 (13), p.1784-1791 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Chugh, Nisha Kumar, Manoj Bhattacharya, Monika Gupta, R. S. |
| description | A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping variation as compared to single heterostructure high electron mobility transistor (SH-HEMT). The effect of gate-length and doping on various performance parameters, i.e., transconductance, drain conductance, cut-off frequency and maximum oscillation frequency has been analysed. The results so obtained are compared with simulation results and are found to be in good agreement. |
| doi_str_mv | 10.1134/S1063782619130050 |
| format | Article |
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The results so obtained are compared with simulation results and are found to be in good agreement.</description><subject>Aluminum gallium nitrides</subject><subject>Computer simulation</subject><subject>Doping</subject><subject>Electron mobility</subject><subject>Frequency analysis</subject><subject>Heterostructures</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Microwave frequencies</subject><subject>Microwaves</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>Radio frequency</subject><subject>Resistance</subject><subject>Semiconductor devices</subject><subject>Transconductance</subject><subject>Transistors</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1UF1Lw0AQPETBWv0Bvh34nPY295HcY6j9ENoKWp_DJdmTlJjEu1bpv_dKBRHxaZfdmWFmCLkFNgLgYvwMTPEkjRVo4IxJdkYGwDSLlEj0-XFXPDr-L8mV91vGAFIpBiTPWtMcfO1pZ2nWBDU5N2yUyvV4btbjXxd6v4gW09WG2s7Rpxk1bUVXdem6T_OBdObwfY9teaBZ3zd1aXZ11_prcmFN4_Hmew7Jy2y6mSyi5eP8YZIto5KD2kUopWGV4FWCJVqNiFyBKComClPFBWhMhICCS9SiULKyKSibaInAeBGXmg_J3Um3d12w4Xf5ttu7kM3nMY8TKblKIaDghAqmvXdo897Vb8YdcmD5scf8T4-BE584PmDbV3Q_yv-TvgCprW_Z</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Chugh, Nisha</creator><creator>Kumar, Manoj</creator><creator>Bhattacharya, Monika</creator><creator>Gupta, R. 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DH-HEMT is observed to be more sensitive to gate-length and doping variation as compared to single heterostructure high electron mobility transistor (SH-HEMT). The effect of gate-length and doping on various performance parameters, i.e., transconductance, drain conductance, cut-off frequency and maximum oscillation frequency has been analysed. The results so obtained are compared with simulation results and are found to be in good agreement.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782619130050</doi><tpages>8</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Aluminum gallium nitrides Computer simulation Doping Electron mobility Frequency analysis Heterostructures Magnetic Materials Magnetism Microwave frequencies Microwaves Physics Physics and Astronomy Physics of Semiconductor Devices Radio frequency Resistance Semiconductor devices Transconductance Transistors |
| title | Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
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