Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications

Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications

A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping v...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-12, Vol.53 (13), p.1784-1791
Hauptverfasser: Chugh, Nisha, Kumar, Manoj, Bhattacharya, Monika, Gupta, R. S.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitrides
Computer simulation
Doping
Electron mobility
Frequency analysis
Heterostructures
Magnetic Materials
Magnetism
Microwave frequencies
Microwaves
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Radio frequency
Resistance
Semiconductor devices
Transconductance
Transistors
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Zusammenfassung:A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping variation as compared to single heterostructure high electron mobility transistor (SH-HEMT). The effect of gate-length and doping on various performance parameters, i.e., transconductance, drain conductance, cut-off frequency and maximum oscillation frequency has been analysed. The results so obtained are compared with simulation results and are found to be in good agreement.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619130050