FINFET operational amplifier with low offset noise and high immunity to electromagnetic interference

Most amplifiers are less immune to the electromagnetic interference (EMI) signal conducted at the input terminals. Operational amplifiers also suffer from EMI signals. Improvement in designs is required to remove the noises in the signal. The designs can be either circuit level or device level. This paper presents the design of an operational amplifier using Fin Field Effect Transistors (FinFETs). The Operational amplifier is designed to minimize the offset by including a low pass filter at the input differential pair of the FinFET based circuit. The measured offset voltage is reduced by about 75% in the proposed structure compared to a conventional one. The Operational amplifier power consumption is reduced when compared to the CMOS counterpart