A universal method to fabricate p-n or Schottky heterojunctions based on two-dimensional electron gas
Two-dimensional electron gas (2DEG) has been studied extensively because of its abundant physical properties, but no effort has been made to construct p-n or Schottky heterojunctions based on it. Here, we report a universal, practical Ar+-ion-bombardment assistant (AIBA) method to achieve a junction...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2019-12, Vol.115 (24) |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Two-dimensional electron gas (2DEG) has been studied extensively because of its abundant physical properties, but no effort has been made to construct p-n or Schottky heterojunctions based on it. Here, we report a universal, practical Ar+-ion-bombardment assistant (AIBA) method to achieve a junction contact between a film of a p-type semiconductor (or metal) and 2DEG. Several materials have been attempted to verify the AIBA method, including a two-dimensional semiconductor (WSe2), an oxide superconductor (YBa2Cu3O7), an amorphous material (amorphous carbon) thin film, and a metal (Au). Despite different growth methods, all of the samples exhibit clear heterointerfaces and good rectifying behaviors, which indicates the formation of p-n and Schottky junctions. Different from the traditional methods to fabricate the vertical heterojunctions by layer-by-layer growth, the AIBA method enables us to achieve lateral heterojunctions, which may lead to remarkable physical properties. These as-fabricated heterostructures show significant photoconductivity at room temperature. This work paves the way for functional 2DEG-based devices with lateral heterojunctions. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5128099 |