Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

The structural, optical, and electrical properties of Si‐doped SnO2 (STO) films were investigated in terms of their potential applications for flexible electronic devices. All STO films were amorphous with an optical transmittance of ~90%. The optical band gap was widened as the Si content increased. The Hall mobility and carrier density were improved in the SnO2 with 1 wt% Si film, which was attributed to the formation of donor states. Si (1 wt%) doped SnO2 thin‐film transistor exhibited a good device performance and good stability with a saturation mobility of 6.38 cm2/Vs, a large Ion/Ioff of 1.44 × 107, and a SS value of 0.77 V/decade. The device mobility of a‐STO TFTs at different bending radius maintained still at a high level. These results suggest that a‐STO thin films are promising for fabricating flexible TFTs. The structural, optical and electrical properties of Si doped SnO2 (STO) films annealed at 250oC were investigated in terms of their potential applications for flexible electronic devices. Flexible STO TFTs were successfully fabricated on PI substrate, which exhibited a good device performance and good stability.