Right-Angle Black Phosphorus Tunneling Field Effect Transistor
We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunn...
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| Veröffentlicht in: | IEEE electron device letters 2019-12, Vol.40 (12), p.1988-1991 |
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| container_end_page | 1991 |
|---|---|
| container_issue | 12 |
| container_start_page | 1988 |
| container_title | IEEE electron device letters |
| container_volume | 40 |
| creator | Robbins, Matthew C. Golani, Prafful Koester, Steven J. |
| description | We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher I ON /I OFF ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only. |
| doi_str_mv | 10.1109/LED.2019.2946763 |
| format | Article |
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This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher I ON /I OFF ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2019.2946763</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anisotropy ; Asymmetry ; Black phosphorus ; Crystal structure ; Crystals ; Effective mass ; Field effect transistors ; Logic gates ; nanotechnology ; Performance evaluation ; Phosphorus ; Semiconductor devices ; Temperature measurement ; TFETs ; Transistors ; Tunneling</subject><ispartof>IEEE electron device letters, 2019-12, Vol.40 (12), p.1988-1991</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-d39ca9deb0ee0cb25bbed9bb22f626c9bb6956a1c02611ffeff3c6e54eb76a783</citedby><cites>FETCH-LOGICAL-c291t-d39ca9deb0ee0cb25bbed9bb22f626c9bb6956a1c02611ffeff3c6e54eb76a783</cites><orcidid>0000-0002-6221-0172 ; 0000-0001-6104-1218 ; 0000-0002-9215-0107</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8865564$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8865564$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Robbins, Matthew C.</creatorcontrib><creatorcontrib>Golani, Prafful</creatorcontrib><creatorcontrib>Koester, Steven J.</creatorcontrib><title>Right-Angle Black Phosphorus Tunneling Field Effect Transistor</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). 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As a result of this asymmetry, the BP TFET displays a higher I ON /I OFF ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.</description><subject>Anisotropy</subject><subject>Asymmetry</subject><subject>Black phosphorus</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Effective mass</subject><subject>Field effect transistors</subject><subject>Logic gates</subject><subject>nanotechnology</subject><subject>Performance evaluation</subject><subject>Phosphorus</subject><subject>Semiconductor devices</subject><subject>Temperature measurement</subject><subject>TFETs</subject><subject>Transistors</subject><subject>Tunneling</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLw0AUhQdRsFb3gpuA69Q7z2Q2Qu1DhYIidT1MJnfa1JjUmWThvzelxdW9i--cAx8htxQmlIJ-WC3mEwZUT5gWKlP8jIyolHkKUvFzMoJM0JRTUJfkKsYdABUiEyPy-FFttl06bTY1Jk-1dV_J-7aN-20b-pis-6bBumo2ybLCukwW3qPrknWwTaxi14ZrcuFtHfHmdMfkc7lYz17S1dvz62y6Sh3TtEtLrp3VJRaACK5gsiiw1EXBmFdMueFTWipLHTBF6TDiPXcKpcAiUzbL-ZjcH3v3of3pMXZm1_ahGSYN44zlOXAmBwqOlAttjAG92Yfq24ZfQ8EcLJnBkjlYMidLQ-TuGKkQ8R_PcyWlEvwPW-RjWw</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Robbins, Matthew C.</creator><creator>Golani, Prafful</creator><creator>Koester, Steven J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6221-0172</orcidid><orcidid>https://orcid.org/0000-0001-6104-1218</orcidid><orcidid>https://orcid.org/0000-0002-9215-0107</orcidid></search><sort><creationdate>20191201</creationdate><title>Right-Angle Black Phosphorus Tunneling Field Effect Transistor</title><author>Robbins, Matthew C. ; Golani, Prafful ; Koester, Steven J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-d39ca9deb0ee0cb25bbed9bb22f626c9bb6956a1c02611ffeff3c6e54eb76a783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Anisotropy</topic><topic>Asymmetry</topic><topic>Black phosphorus</topic><topic>Crystal structure</topic><topic>Crystals</topic><topic>Effective mass</topic><topic>Field effect transistors</topic><topic>Logic gates</topic><topic>nanotechnology</topic><topic>Performance evaluation</topic><topic>Phosphorus</topic><topic>Semiconductor devices</topic><topic>Temperature measurement</topic><topic>TFETs</topic><topic>Transistors</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Robbins, Matthew C.</creatorcontrib><creatorcontrib>Golani, Prafful</creatorcontrib><creatorcontrib>Koester, Steven J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Robbins, Matthew C.</au><au>Golani, Prafful</au><au>Koester, Steven J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Right-Angle Black Phosphorus Tunneling Field Effect Transistor</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2019-12-01</date><risdate>2019</risdate><volume>40</volume><issue>12</issue><spage>1988</spage><epage>1991</epage><pages>1988-1991</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). 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| ispartof | IEEE electron device letters, 2019-12, Vol.40 (12), p.1988-1991 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_2322880325 |
| source | IEEE Electronic Library (IEL) |
| subjects | Anisotropy Asymmetry Black phosphorus Crystal structure Crystals Effective mass Field effect transistors Logic gates nanotechnology Performance evaluation Phosphorus Semiconductor devices Temperature measurement TFETs Transistors Tunneling |
| title | Right-Angle Black Phosphorus Tunneling Field Effect Transistor |
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