Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Right-Angle Black Phosphorus Tunneling Field Effect Transistor

We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunn...

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Veröffentlicht in:IEEE electron device letters 2019-12, Vol.40 (12), p.1988-1991
Hauptverfasser: Robbins, Matthew C., Golani, Prafful, Koester, Steven J.
Format: Artikel
Sprache:eng
Schlagworte:
Anisotropy
Asymmetry
Black phosphorus
Crystal structure
Crystals
Effective mass
Field effect transistors
Logic gates
nanotechnology
Performance evaluation
Phosphorus
Semiconductor devices
Temperature measurement
TFETs
Transistors
Tunneling
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Beschreibung
Zusammenfassung:We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher I ON /I OFF ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2946763