PSPHV: A Surface-Potential-Based Model for LDMOS Transistors
This article presents PSPHV, a surface-potential-based compact model for laterally diffused MOS (LDMOS) transistors. PSPHV includes a new drain voltage scaling technique that enables accurate modeling of saturation in transistors with nonuniform lateral doping; gate bias-dependent interface charge,...
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Veröffentlicht in: | IEEE transactions on electron devices 2019-12, Vol.66 (12), p.5246-5253 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This article presents PSPHV, a surface-potential-based compact model for laterally diffused MOS (LDMOS) transistors. PSPHV includes a new drain voltage scaling technique that enables accurate modeling of saturation in transistors with nonuniform lateral doping; gate bias-dependent interface charge, which models the gradual channel turn- ON seen in devices with halo doping; internal drain bias clamping, which eliminates the capacitance spikes seen in most existing LDMOS models; and a new avalanche current model for the drift region that accounts for the Kirk effect. PSPHV models the drain expansion effect and diode reverse recovery and is verified against experimental data. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2019.2945832 |