PSPHV: A Surface-Potential-Based Model for LDMOS Transistors

This article presents PSPHV, a surface-potential-based compact model for laterally diffused MOS (LDMOS) transistors. PSPHV includes a new drain voltage scaling technique that enables accurate modeling of saturation in transistors with nonuniform lateral doping; gate bias-dependent interface charge,...

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Veröffentlicht in:IEEE transactions on electron devices 2019-12, Vol.66 (12), p.5246-5253
Hauptverfasser: Xia, Kejun, McAndrew, Colin C., Van Langevelde, Ronald, Smit, Geert D. J., Scholten, Andries J.
Format: Artikel
Sprache:eng
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Zusammenfassung:This article presents PSPHV, a surface-potential-based compact model for laterally diffused MOS (LDMOS) transistors. PSPHV includes a new drain voltage scaling technique that enables accurate modeling of saturation in transistors with nonuniform lateral doping; gate bias-dependent interface charge, which models the gradual channel turn- ON seen in devices with halo doping; internal drain bias clamping, which eliminates the capacitance spikes seen in most existing LDMOS models; and a new avalanche current model for the drift region that accounts for the Kirk effect. PSPHV models the drain expansion effect and diode reverse recovery and is verified against experimental data.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2945832