4f conduction in the magnetic semiconductor NdN

We report the growth of films of the intrinsic ferromagnetic semiconductor NdN and investigate their optical and transport properties. There is clear evidence of a strong anomalous Hall effect as expected from a 4f conduction channel, supported by an optical absorption into a 4f or 4f/5d hybridized...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B 2019-11, Vol.100 (19)
Hauptverfasser: Holmes-Hewett, W F, Buckley, R G, Ruck, B J, Natali, F, Trodahl, H J
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report the growth of films of the intrinsic ferromagnetic semiconductor NdN and investigate their optical and transport properties. There is clear evidence of a strong anomalous Hall effect as expected from a 4f conduction channel, supported by an optical absorption into a 4f or 4f/5d hybridized tail at the base of the conduction band. The results reveal a heavy-fermion 4f/5d band lying where it can be occupied at controllable levels with nitrogen-vacancy donors.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.100.195119