Magnetic and transport properties of a ferromagnetic layered semiconductor MnIn2Se4
Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based o...
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| Veröffentlicht in: | Applied physics letters 2019-11, Vol.115 (22) |
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| container_title | Applied physics letters |
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| creator | Yang, Juehan Zhou, Ziqi Fang, Jingzhi Wen, Hongyu Lou, Zheng Shen, Guozhen Wei, Zhongming |
| description | Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based on few-layer MnIn2Se4 exhibit n-type characteristics, with a high on-off ratio of up to 450 times, and exhibit a good photoresponse with an on-off ratio of 25 times. Magnetic measurements show that few-layer MnIn2Se4 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ∼7 K. This study suggests that MnIn2Se4 has potential in applications involving magnetic and optoelectronic devices. |
| doi_str_mv | 10.1063/1.5126233 |
| format | Article |
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In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based on few-layer MnIn2Se4 exhibit n-type characteristics, with a high on-off ratio of up to 450 times, and exhibit a good photoresponse with an on-off ratio of 25 times. Magnetic measurements show that few-layer MnIn2Se4 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ∼7 K. 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This study suggests that MnIn2Se4 has potential in applications involving magnetic and optoelectronic devices.</description><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Curie temperature</subject><subject>Ferromagnetic materials</subject><subject>Field effect transistors</subject><subject>Low temperature</subject><subject>Magnetic measurement</subject><subject>Magnetic properties</subject><subject>Magnetism</subject><subject>Optoelectronic devices</subject><subject>Photoelectric effect</subject><subject>Photoelectricity</subject><subject>Semiconductor devices</subject><subject>Transport properties</subject><subject>Two dimensional materials</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX8Q8KSwNZPZ3ewepfhRaPFQPYdskpUtbbImqdB_70qrHgRPw8DDO8NLyCWwCbASb2FSAC854hEZARMiQ4DqmIwYY5iVdQGn5CzG1bAWAxqR5UK9OZs6TZUzNAXlYu9Don3wvQ2ps5H6lira2hD85tuu1c4Ga2i0m057Z7Y6-UAXbub40ubn5KRV62gvDnNMXh_uX6ZP2fz5cTa9m2cauUiZQCFQgSiashJ1jrZBxqpGsbYqLJgSbV6JHJumZlAarQvMc0TDgCmujahwTK72ucOz71sbk1z5bXDDSckRhMgZh3pQ13ulg48x2Fb2oduosJPA5FdnEuShs8He7G3UXVKp8-4Hf_jwC2Vv2v_w3-RPjpN5EA</recordid><startdate>20191125</startdate><enddate>20191125</enddate><creator>Yang, Juehan</creator><creator>Zhou, Ziqi</creator><creator>Fang, Jingzhi</creator><creator>Wen, Hongyu</creator><creator>Lou, Zheng</creator><creator>Shen, Guozhen</creator><creator>Wei, Zhongming</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6237-0993</orcidid></search><sort><creationdate>20191125</creationdate><title>Magnetic and transport properties of a ferromagnetic layered semiconductor MnIn2Se4</title><author>Yang, Juehan ; Zhou, Ziqi ; Fang, Jingzhi ; Wen, Hongyu ; Lou, Zheng ; Shen, Guozhen ; Wei, Zhongming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-73773a175b687943eb3008ba0f85e1d63e48743bb9016dcc534433d010a2cd783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Anisotropy</topic><topic>Applied physics</topic><topic>Curie temperature</topic><topic>Ferromagnetic materials</topic><topic>Field effect transistors</topic><topic>Low temperature</topic><topic>Magnetic measurement</topic><topic>Magnetic properties</topic><topic>Magnetism</topic><topic>Optoelectronic devices</topic><topic>Photoelectric effect</topic><topic>Photoelectricity</topic><topic>Semiconductor devices</topic><topic>Transport properties</topic><topic>Two dimensional materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Juehan</creatorcontrib><creatorcontrib>Zhou, Ziqi</creatorcontrib><creatorcontrib>Fang, Jingzhi</creatorcontrib><creatorcontrib>Wen, Hongyu</creatorcontrib><creatorcontrib>Lou, Zheng</creatorcontrib><creatorcontrib>Shen, Guozhen</creatorcontrib><creatorcontrib>Wei, Zhongming</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Juehan</au><au>Zhou, Ziqi</au><au>Fang, Jingzhi</au><au>Wen, Hongyu</au><au>Lou, Zheng</au><au>Shen, Guozhen</au><au>Wei, Zhongming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetic and transport properties of a ferromagnetic layered semiconductor MnIn2Se4</atitle><jtitle>Applied physics letters</jtitle><date>2019-11-25</date><risdate>2019</risdate><volume>115</volume><issue>22</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Anisotropy Applied physics Curie temperature Ferromagnetic materials Field effect transistors Low temperature Magnetic measurement Magnetic properties Magnetism Optoelectronic devices Photoelectric effect Photoelectricity Semiconductor devices Transport properties Two dimensional materials |
| title | Magnetic and transport properties of a ferromagnetic layered semiconductor MnIn2Se4 |
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