Magnetic and transport properties of a ferromagnetic layered semiconductor MnIn2Se4
Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based o...
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Veröffentlicht in: | Applied physics letters 2019-11, Vol.115 (22) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based on few-layer MnIn2Se4 exhibit n-type characteristics, with a high on-off ratio of up to 450 times, and exhibit a good photoresponse with an on-off ratio of 25 times. Magnetic measurements show that few-layer MnIn2Se4 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ∼7 K. This study suggests that MnIn2Se4 has potential in applications involving magnetic and optoelectronic devices. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5126233 |