Magnetic and transport properties of a ferromagnetic layered semiconductor MnIn2Se4

Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based o...

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Veröffentlicht in:Applied physics letters 2019-11, Vol.115 (22)
Hauptverfasser: Yang, Juehan, Zhou, Ziqi, Fang, Jingzhi, Wen, Hongyu, Lou, Zheng, Shen, Guozhen, Wei, Zhongming
Format: Artikel
Sprache:eng
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Zusammenfassung:Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based on few-layer MnIn2Se4 exhibit n-type characteristics, with a high on-off ratio of up to 450 times, and exhibit a good photoresponse with an on-off ratio of 25 times. Magnetic measurements show that few-layer MnIn2Se4 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ∼7 K. This study suggests that MnIn2Se4 has potential in applications involving magnetic and optoelectronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5126233