Anderson Localization in 2D Amorphous MoO3‐x Monolayers for Electrochemical Ammonia Synthesis

Two‐dimensional amorphous semiconductor (2DAS) monolayers can be regarded as a new phase of 2D monolayers materials and will serve as a promising field for the various electronic and optoelectronic applications. Here, together with the first‐principles calculations within density functional theory, we experimentally demonstrate that the 2DAS MoO3‐x monolayers can enhance the electrochemical nitrogen reduction reaction (NRR). To be specific, the NH3 yield and faradaic efficiency (FE) reach 35.83 ug h−1 mg−1cat at −0.40 V and 12.01 % at −0.20 V vs. reversible hydrogen electrode (RHE), respectively, and which can be dramatically improved than that of reported defective MoO3 nanosheets. Further theoretical calculations reveal that the high electrochemical performance in NH3 yield is contributed to the strong Anderson localization and electron confinement dimensionally. And such Anderson tail states can resonate effectively with the states of intermediate HNNH, playing the critical role in the rate limiting step of NRR. Integrated experimental findings and theoretical understanding, a new concept of Anderson confinement catalysis is put forward, and could be extended to other 2DAS for potential catalytic reactions. Nitrogen reduction: Here, it is demonstrated that Anderson tail states of two‐dimensional (2D) amorphous MoO3–x can resonate effectively with the states of intermediate HNNH and achieve the high‐efficiency electrochemical activity for nitrogen reduction reaction with the NH3 yield and faradaic efficiency reaching 35.83 ug h−1 mg−1cat at −0.40 V and 12.01 % at −0.20 V, respectively.