Impact of iron atoms on electronic properties of FZ n-Si with dislocations

Impact of iron atoms on electronic properties of FZ n-Si containing dislocations introduced by plastic deformation is studied using deep level transient spectroscopy (DLTS) and laser beam induced current (LBIC). Amplitudes of dislocation related DLTS peaks “C1” at 201 K and “D” at 247 K increase significantly after diffusing iron at 900 °C in the samples quenched after diffusion. DLTS and LBIC data correlate nicely showing a significant increase of electron-hole recombination at dislocations in the same samples. We therefore suppose that the DLTS peaks “C1” and “D” observed earlier in many publications can be partially related to iron at dislocations. •Impact of iron atoms on the electronic properties of Si containing dislocations is investigated by the DLTS and LBIC. It was found that the electron-hole recombination rate at dislocations increases after Fe in-diffusion in correlation with increase of DLTS peaks at 201K and 247K.