Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping

Metamorphic laser heterostructures In(Sb, As)/In 0.81 Ga 0.19 As/In 0.75 Al 0.25 As with InSb/InAs/InGaAs composite quantum wells based on submonolayer InSb insertions in a 10-nm InAs layer have been grown by molecular beam epitaxy on GaAs (001) substrates. Stimulated emission at a wavelength of λ ~ 2.86 μm at temperatures of 10–60 K at optical pumping has been demonstrated in such structures without an optical cavity. The threshold pump power density is about 5 kW/cm 2 at a temperature of 10 K.