Enhanced ferroelectric properties of P(VDF-TrFE) thin films from Nb nanopin electrodes

We demonstrate the influence of Nb nanopin electrodes on ferroelectric properties of poly(vinylidene fluoride-ran-trifluoroethylene) (P(VDF-TrFE)) thin films deposited using a spin-coating technique. The Nb nanopin electrodes consisting of an array of regular hexagon nanopins were formed by virtue of a multiple anodizing process and an etching process of an Al/Nb/SiO2/Si multilayer structure. An electric field enhancement of the Nb nanopin electrodes contributed to the improved ferroelectric polarizations, low coercive electric fields, and fast switching characteristics of the P(VDF-TrFE) thin-film capacitors. Futhermore, the Nb nanopin electrodes made a significant contribution to low activation energy of domain wall motion. In particular, the study of domain wall motion by piezoresponse force microscopy support that the fast switching properties of the P(VDF-TrFE) capacitors is attributed to the low activation energy for the domain wall motion. This work provides a solution to solve problems of the high coercive and switching electric fields that have been considered obstacles in electronic devices and applications of the P(VDF-TrFE) thin films. [Display omitted] •The P(VDF-TrFE) thin films were deposited using a spin-coating technique.•The Nb nanopin electrodes were formed by wet etching using an anodic aluminum oxide (AAO) nanotemplate.•The Nb nanopin electrodes contributed to enhancement of ferroelectric properties of P(VDF-TrFE) thin films.•The polarization switching speed of P(VDF-TrFE) thin films increased on the Nb nanopin electrodes.