Investigations on the structural, optical and electrical properties of InxGa1-xN thin films

The Investigations on the growth of InxGa1-xN thin films on silicon (100) substrate at different temperatures via nitridation of the deposited indium gallium oxide. The estimation from X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies clearly shows the presence of indium ric...

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Veröffentlicht in:	Materials chemistry and physics 2019-08, Vol.234, p.318-322
Hauptverfasser:	Bagavath, Chandran, Kumar, Janakiraman
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Crystallization Electrical properties Gallium oxides Indium gallium nitrides InxGa1-xN Optical properties Photoelectrons Photoluminescence Photovoltaic cells Raman spectra Silicon substrates Solar cells Thin films Wurtzite X ray photoelectron spectroscopy X-ray diffraction (XRD): atomic force microscope (AFM) X-ray Photoelectron spectroscopy (XPS)
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