Investigations on the structural, optical and electrical properties of InxGa1-xN thin films

The Investigations on the growth of InxGa1-xN thin films on silicon (100) substrate at different temperatures via nitridation of the deposited indium gallium oxide. The estimation from X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies clearly shows the presence of indium rich content of about 30% in the grown InxGa1-xN thin films. The A1(LO) phonon peak in micro-Raman scattering at 670 cm−1 correlates that the films are crystallized in the characteristic wurtzite structure. In the photoluminescence measurement a broad spectrum has been observed. The carrier concentration and mobility of InxGa1-xN thin film is evaluated to be 1.71 × 1017 cm−3 and 135 cm2V−1s−1. From the obtained results, it is suggested that the preparedIndium rich InxGa1-xN thin film can be used for the realisation of hetro-structure solar cell on Si substrates. •InxGa1-xN thin films at different temperatures via nitridation of the deposited indium gallium oxide.•30% the Indium concentration is calculated from the XRD peak shift using Vegard's law and XPS.•Raman spectra showed that the InxGa1-xN thin films are in wurtzite structure.