A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review

As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important concern for device performance, output power density, run-time variability, and reliability of modern field-effect transistors. The self-heating effect is aggravated as the device footprint scales down for hi...

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Veröffentlicht in:	IEEE transactions on electron devices 2019-11, Vol.66 (11), p.4556-4565
Hauptverfasser:	Alam, Muhammad Ashraful, Mahajan, Bikram Kishore, Chen, Yen-Pu, Ahn, Woojin, Jiang, Hai, Shin, Sang Hoon
Format:	Artikel
Sprache:	eng
Schlagworte:	Coherent scattering Data models Degradation Electronic devices Field effect transistors FinFETs Heating High temperature effects hot carrier degradation (HCD) Lattices Mathematical model MOSFET Optimization power electronics self-heating effect Semiconductor devices Systems design Temperature dependence Transistors universal scaling
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