The pulsed laser-induced Schottky junction via in-situ forming Cd clusters on CdS surfaces toward efficient visible light-driven photocatalytic hydrogen evolution

[Display omitted] •The post-treatment technique via pulsed laser irradiation was developed.•The Schottky junction between Cd clusters and CdS was in-situ formed on CdS surfaces.•The rate of hydrogen evolution over in the first hour is 40-times than that of pure CdS.•The Schottky junction between Cd...

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Veröffentlicht in:Applied catalysis. B, Environmental Environmental, 2019-12, Vol.258, p.117967, Article 117967
Hauptverfasser: Zhong, Wenwu, Shen, Shijie, He, Min, Wang, Da, Wang, Zongpeng, Lin, Zhiping, Tu, Wenguang, Yu, Jiaguo
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Sprache:eng
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Zusammenfassung:[Display omitted] •The post-treatment technique via pulsed laser irradiation was developed.•The Schottky junction between Cd clusters and CdS was in-situ formed on CdS surfaces.•The rate of hydrogen evolution over in the first hour is 40-times than that of pure CdS.•The Schottky junction between Cd clusters and CdS reduce electron-hole recombination. Herein, we developed one simple and novel post-treatment technique via pulsed laser irradiation of CdS (L-CdS) semiconductor to significantly enhance the visible light-driven hydrogen evolution performance from water splitting, during which the rate of hydrogen evolution over L-CdS in the first hour is 40-times than that of pure CdS. Because the pulsed laser irradiation induces the in-situ formation of metallic Cd clusters on CdS surface to construct the Schottky junction between Cd clusters and CdS, obviously facilitating the electron transfer from excited CdS into Cd to endow more photogenerated electrons for enhancing the photocatalytic efficiency of H2 evolution. Moreover, the bandgap narrow of post-treated CdS also benefits the stronger light absorption for enhancing the photocatalytic efficiency. This work may provide a new approach to develop heterojunction-based photocatalysts for efficient solar-to-chemical conversion.
ISSN:0926-3373
1873-3883
DOI:10.1016/j.apcatb.2019.117967