An Atmospheric-Pressure Plasma Process for C2F6 Removal
Perfluorocompounds (PFCs) are widely used in the semiconductor industry for plasma etching and chemical vapor deposition (CVD). They are relatively inert gases that intensely absorb infrared radiation and, therefore, aggravate the greenhouse effect. A bench-scale experimental system was designed and...
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Veröffentlicht in: | Environmental science & technology 2001-04, Vol.35 (8), p.1587-1592 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Perfluorocompounds (PFCs) are widely used in the semiconductor industry for plasma etching and chemical vapor deposition (CVD). They are relatively inert gases that intensely absorb infrared radiation and, therefore, aggravate the greenhouse effect. A bench-scale experimental system was designed and constructed to evaluate the effectiveness of C2F6 conversion by using dielectric barrier discharges (DBD) with atmospheric-pressure plasma processing. Experimental results indicated that the removal efficiency of C2F6 increased with applications of higher voltage and frequency. Combined plasma catalysis (CPC) is an innovative way for abatement of PFCs, and experimental results revealed that combining plasma generation with catalysts could effectively enhance C2F6 removal efficiency achieved with DBD. The major products of C2F6 with DBD processing include CO2, COF2, and CO, when O2 was included in the discharge process. Experimental results indicated that as high as 94.5% of C2F6 were removed via CPC at applied voltage of 15 kV, frequency of 240 Hz in the gas stream of N2:Ar:O2:C2F6 = 50:40:10:0.03. |
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ISSN: | 0013-936X 1520-5851 |
DOI: | 10.1021/es001556p |