3.6: High‐Reliability OLED Display Panel using Top Gate IGZO TFTs for 55inch UHD TVs

To improve electrical characteristics of top gate a‐IGZO TFT we have been optimized the oxygen in IGZO layer and decreased the excess oxygen of Gate Insulator layer. We achieved that the uniformity of threshold voltages of a‐IGZO TFTs on Gen. 8.5 glass is approximately 0.61V. Also, we achieved BTS c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.44-46
Hauptverfasser:	Huang, Yongchao, Cheng, Jun, Fang, Jingang, Ding, Luke, Zhao, Ce, Zhou, Bin, Wang, Dongfang, Yan, Liangchen
Format:	Artikel
Sprache:	eng
Schlagworte:	Diodes Image Sticking Indium gallium zinc oxide OLED Display Organic light emitting diodes Oxide Semiconductor Reliability Thin Film Transistor Threshold voltage
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!