3.6: High‐Reliability OLED Display Panel using Top Gate IGZO TFTs for 55inch UHD TVs

3.6: High‐Reliability OLED Display Panel using Top Gate IGZO TFTs for 55inch UHD TVs

To improve electrical characteristics of top gate a‐IGZO TFT we have been optimized the oxygen in IGZO layer and decreased the excess oxygen of Gate Insulator layer. We achieved that the uniformity of threshold voltages of a‐IGZO TFTs on Gen. 8.5 glass is approximately 0.61V. Also, we achieved BTS c...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.44-46
Hauptverfasser: Huang, Yongchao, Cheng, Jun, Fang, Jingang, Ding, Luke, Zhao, Ce, Zhou, Bin, Wang, Dongfang, Yan, Liangchen
Format: Artikel
Sprache:eng
Schlagworte:
Diodes
Image Sticking
Indium gallium zinc oxide
OLED Display
Organic light emitting diodes
Oxide Semiconductor
Reliability
Thin Film Transistor
Threshold voltage
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Zusammenfassung:To improve electrical characteristics of top gate a‐IGZO TFT we have been optimized the oxygen in IGZO layer and decreased the excess oxygen of Gate Insulator layer. We achieved that the uniformity of threshold voltages of a‐IGZO TFTs on Gen. 8.5 glass is approximately 0.61V. Also, we achieved BTS characteristic about Δ0.1V at 2hr PBTS and Δ‐0.2V at 2hr NBTiS. In addition, we demonstrated the 55‐in 4K UHD OLED TV with high reliability Image sticking.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13377