P‐6.9: High‐reliability a‐Si:H TFT with Repressing Photo‐degradation on G8.6 LCDs

P‐6.9: High‐reliability a‐Si:H TFT with Repressing Photo‐degradation on G8.6 LCDs

Hydrogenated amorphous silicon (a‐si:H) is still applied to the mass production in large size liquid crystal display (LCD) as the major active layer material. In this paper, we successfully fabricated high‐optical‐quality a‐si:H thin film transistor (TFT) on G8.6 LCDs. Photo‐stability of a‐si:H TFT...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.779-780
Hauptverfasser: Chao, Wei, An-Thung, Cho, Hejing, Zhang, Qionghua, Mo, Zhen, Liu, Fengyun, Yang, Kaijun, Liu, James, Hsu
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous silicon
LCDs
Liquid crystal displays
Mass production
Photo-degradation
Photodegradation
Production methods
Semiconductor devices
stability
the gate insulting layer
Thin film transistors
Von Margin
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Zusammenfassung:Hydrogenated amorphous silicon (a‐si:H) is still applied to the mass production in large size liquid crystal display (LCD) as the major active layer material. In this paper, we successfully fabricated high‐optical‐quality a‐si:H thin film transistor (TFT) on G8.6 LCDs. Photo‐stability of a‐si:H TFT with 4‐mask process was enhanced by restructuring the gate insulating layer (GI) structure. With using this advanced manufacturing method, the photo‐degradation of devices was repressed and the optical performance was improved.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13645