P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique
Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, es...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.656-659 |
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| creator | Tao, Jinao Chang, Baozhu Zhang, Shengdong |
| description | Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, especially the negative bias illumination stress‐induced stability. |
| doi_str_mv | 10.1002/sdtp.13601 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2300539947</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2300539947</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1051-458cb85850188c1b02ba6f71472bbb38442fdd581a8f6b7f094a41885f9421bf3</originalsourceid><addsrcrecordid>eNp9kNFKwzAYhYMoOKc3PkHAO6EzaZM28U6m08Fgg1WQ3YSkTbbM2takQ3bnI_iMPomZ9dqr_xz4zn_gAHCJ0QgjFN_4smtHOEkRPgKDGKcsQpjyYzBAiGcRT9OXU3Dm_RahJCGED8Dr4vvzC4-yW7jUlQlaVnZd6xLmTRvcWnYayiBWblqv6jnMN7YOdmKrN5g7WXvru8Z5OJHK2SLQJVR7OG58u-s67Wy9hrkuNrV93-lzcGJk5fXF3x2C58lDPn6KZvPH6fhuFhUYURwRygrFKKMIM1ZghWIlU5NhksVKqYQREpuypAxLZlKVGcSJJAGlhpMYK5MMwVX_t3VNqPWd2DY7V4dKEScI0YRzkgXquqcK13jvtBGts2_S7QVG4jCmOIwpfscMMO7hD1vp_T-kWN7niz7zA4feex0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2300539947</pqid></control><display><type>article</type><title>P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique</title><source>Wiley Online Library All Journals</source><creator>Tao, Jinao ; Chang, Baozhu ; Zhang, Shengdong</creator><creatorcontrib>Tao, Jinao ; Chang, Baozhu ; Zhang, Shengdong</creatorcontrib><description>Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, especially the negative bias illumination stress‐induced stability.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.13601</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>self-aligned top-gate structure ; Stability ; stress stability ; thin film transistors ; Transistors ; ZrInZnO</subject><ispartof>SID International Symposium Digest of technical papers, 2019-09, Vol.50 (S1), p.656-659</ispartof><rights>2019 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1051-458cb85850188c1b02ba6f71472bbb38442fdd581a8f6b7f094a41885f9421bf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.13601$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.13601$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Tao, Jinao</creatorcontrib><creatorcontrib>Chang, Baozhu</creatorcontrib><creatorcontrib>Zhang, Shengdong</creatorcontrib><title>P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique</title><title>SID International Symposium Digest of technical papers</title><description>Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, especially the negative bias illumination stress‐induced stability.</description><subject>self-aligned top-gate structure</subject><subject>Stability</subject><subject>stress stability</subject><subject>thin film transistors</subject><subject>Transistors</subject><subject>ZrInZnO</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kNFKwzAYhYMoOKc3PkHAO6EzaZM28U6m08Fgg1WQ3YSkTbbM2takQ3bnI_iMPomZ9dqr_xz4zn_gAHCJ0QgjFN_4smtHOEkRPgKDGKcsQpjyYzBAiGcRT9OXU3Dm_RahJCGED8Dr4vvzC4-yW7jUlQlaVnZd6xLmTRvcWnYayiBWblqv6jnMN7YOdmKrN5g7WXvru8Z5OJHK2SLQJVR7OG58u-s67Wy9hrkuNrV93-lzcGJk5fXF3x2C58lDPn6KZvPH6fhuFhUYURwRygrFKKMIM1ZghWIlU5NhksVKqYQREpuypAxLZlKVGcSJJAGlhpMYK5MMwVX_t3VNqPWd2DY7V4dKEScI0YRzkgXquqcK13jvtBGts2_S7QVG4jCmOIwpfscMMO7hD1vp_T-kWN7niz7zA4feex0</recordid><startdate>201909</startdate><enddate>201909</enddate><creator>Tao, Jinao</creator><creator>Chang, Baozhu</creator><creator>Zhang, Shengdong</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201909</creationdate><title>P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique</title><author>Tao, Jinao ; Chang, Baozhu ; Zhang, Shengdong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1051-458cb85850188c1b02ba6f71472bbb38442fdd581a8f6b7f094a41885f9421bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>self-aligned top-gate structure</topic><topic>Stability</topic><topic>stress stability</topic><topic>thin film transistors</topic><topic>Transistors</topic><topic>ZrInZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tao, Jinao</creatorcontrib><creatorcontrib>Chang, Baozhu</creatorcontrib><creatorcontrib>Zhang, Shengdong</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tao, Jinao</au><au>Chang, Baozhu</au><au>Zhang, Shengdong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2019-09</date><risdate>2019</risdate><volume>50</volume><issue>S1</issue><spage>656</spage><epage>659</epage><pages>656-659</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, especially the negative bias illumination stress‐induced stability.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.13601</doi><tpages>4</tpages></addata></record> |
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| subjects | self-aligned top-gate structure Stability stress stability thin film transistors Transistors ZrInZnO |
| title | P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T16%3A44%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=P%E2%80%901.7:%20Self%E2%80%90aligned%20Top%E2%80%90gate%20a%E2%80%90ZrInZnO%20Thin%E2%80%90Film%20Transistors%20Fabricated%20by%20Cosputtering%20Technique&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Tao,%20Jinao&rft.date=2019-09&rft.volume=50&rft.issue=S1&rft.spage=656&rft.epage=659&rft.pages=656-659&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.13601&rft_dat=%3Cproquest_cross%3E2300539947%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2300539947&rft_id=info:pmid/&rfr_iscdi=true |