P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, es...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.656-659
Hauptverfasser: Tao, Jinao, Chang, Baozhu, Zhang, Shengdong
Format: Artikel
Sprache:eng
Schlagworte:
self-aligned top-gate structure
Stability
stress stability
thin film transistors
Transistors
ZrInZnO
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Zusammenfassung:Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, especially the negative bias illumination stress‐induced stability.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13601