41.1: Invited Paper: Efficient pre‐treatment for improving the via hole profile in 4‐mask process TFT architecture

41.1: Invited Paper: Efficient pre‐treatment for improving the via hole profile in 4‐mask process TFT architecture

Ways to solve the passivation layer undercut in via hole were described in detail. By tuning the pretreatment before the passivation layer deposition, the passivation layer undercut in via hole was solved efficiently without any other side effects. Different from changing dry etching process paramet...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.456-458
Hauptverfasser: Zhen, Liu, An-Thung, Cho, Hejing, Zhang, Fengyun, Yang, Kaijun, Liu, Qionghua, Mo, Chao, Wei, Wanfei, Yong, James, Hsu
Format: Artikel
Sprache:eng
Schlagworte:
backchannel
image sticking
interface
passivation layer
Passivity
Pretreatment
Process parameters
Side effects
Undercut
via hole
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Beschreibung
Zusammenfassung:Ways to solve the passivation layer undercut in via hole were described in detail. By tuning the pretreatment before the passivation layer deposition, the passivation layer undercut in via hole was solved efficiently without any other side effects. Different from changing dry etching process parameters, we increasing the adhesion of the interface between metal layer and passivation layer to overcome undercut issue.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13527