3 kV/2.94 m [Formula Omitted] cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

3 kV/2.94 m [Formula Omitted] cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

3 kV at a [Formula Omitted] of [Formula Omitted]/mm and differential specific ON-resistance ([Formula Omitted]) of 2.94 [Formula Omitted]cm2, yielding a high P-FOM of more than 3 GW/cm2. To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining...

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Veröffentlicht in:IEEE electron device letters 2019-01, Vol.40 (10), p.1583
Hauptverfasser: Zhang, Tao, Zhang, Jincheng, Zhou, Hong, Wang, Yi, Chen, Tangsheng, Zhang, Kai, Zhang, Yachao, Dang, Kui, Bian, Zhaoke, Zhang, Jinfeng, Xu, Shengrui, Duan, Xiaoling, Ning, Jing, Yue Hao
Format: Artikel
Sprache:eng
Schlagworte:
Anodes
Gallium nitrides
Leakage current
Schottky diodes
Silicon substrates
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Zusammenfassung:3 kV at a [Formula Omitted] of [Formula Omitted]/mm and differential specific ON-resistance ([Formula Omitted]) of 2.94 [Formula Omitted]cm2, yielding a high P-FOM of more than 3 GW/cm2. To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining with 5 A forward current ([Formula Omitted]) and reverse BV >2 kV of a large periphery device with perimeter of 20 mm, GaN SBD with anode engineering technique shows its great promise for next generation power electronics.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2933314