Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two...

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Veröffentlicht in:Key engineering materials 2019-09, Vol.822, p.594-600
Hauptverfasser: Ruby, Singh, Endiiarova, E.V.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical etching
Inductance
Matching
Mathematical analysis
Organic chemistry
Plasma etching
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Beschreibung
Zusammenfassung:. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.822.594