Aspect-Independent Siliconglass Etching by Bosch Method

The purpose of this work was to study and carry out glass etching of monocrystalline silicon using the Bosch method, acquaintance with the conditions of aspect-independent etching. The Bosch process was conducted using sulfur hexafluorideSF6 and perfluorocyclobutaneC4F8on OxfordInstrumentsPlasmaPro®...

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Veröffentlicht in:	Key engineering materials 2019-09, Vol.822, p.640-646
Hauptverfasser:	Alieva, Aleksandra I., Kucal, Ewelina, Alekseev, R.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Etching
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The purpose of this work was to study and carry out glass etching of monocrystalline silicon using the Bosch method, acquaintance with the conditions of aspect-independent etching. The Bosch process was conducted using sulfur hexafluorideSF6 and perfluorocyclobutaneC4F8on OxfordInstrumentsPlasmaPro®Estrelas100. It was found that in order to level the problems that arise, it is necessary to vary the temporal relations of etching and passivation stages.
ISSN:	1013-9826 1662-9795 1662-9795
DOI:	10.4028/www.scientific.net/KEM.822.640