A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes

A novel reverse-conducting (RC) lateral insulated gate bipolar transistor based on the silicon-on-insulator (SOI-LIGBT) with integrated parallel/antiparallel polysilicon diodes ( \text{D}_{F} and \text{D}_{R} ) on the top of the anode active region is proposed and investigated by simulation. Durin...

Ausführliche Beschreibung