A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes

A novel reverse-conducting (RC) lateral insulated gate bipolar transistor based on the silicon-on-insulator (SOI-LIGBT) with integrated parallel/antiparallel polysilicon diodes ( \text{D}_{F} and \text{D}_{R} ) on the top of the anode active region is proposed and investigated by simulation. During the turn-off transient, the major part of the excess electron current flows through the parallel diode \text{D}_{F} which achieves a low turn-off loss ( E_{ \mathrm{\scriptscriptstyle OFF}} ). While during the forward-conducting state, the voltage across the p+-anode/n-buffer junction can rapidly increase to the junction's built-in potential ( {V}_{\text {bi}} ) at low anode current, which results in snapback immunity. Moreover, the antiparallel diode \text{D}_{R} enables the proposed device to realize RC capability. Simulation results reveal that the proposed RC-LIGBT can realize superior E_{ \mathrm{\scriptscriptstyle OFF}} - V_{ \mathrm{\scriptscriptstyle ON}} tradeoff relationship than both the conventional LIGBT and the separated shorted-anode LIGBT (SSA-LIGBT). When E_{ \mathrm{\scriptscriptstyle OFF}} is 0.44 mJ/cm 2 , V_{ \mathrm{\scriptscriptstyle ON}} of the proposed RC-LIGBT is 1.95 V, which is 0.47 V lower than that of the SSA-LIGBT. Under {V}_{ \mathrm{\scriptscriptstyle ON}} of 1.95 V, E_{ \mathrm{\scriptscriptstyle OFF}} of the proposed RC-LIGBT is 0.44 mJ/cm 2 , which is reduced by 44.3% than that of the conventional LIGBT. Furthermore, the reverse recovery charge ( {Q}_{\text {rr}} ) of the proposed device is reduced by 25.8