Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

A 6–18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 µm gate length process, GH25. A study of the suitable attac...

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Veröffentlicht in:International journal of microwave and wireless technologies 2019-09, Vol.11 (7), p.625-634
Hauptverfasser: Oreja Gigorro, Eduardo, Delgado Pascual, Emilio, Sánchez Martínez, Juan José, Gil Heras, María Luz, Bueno Fernández, Virginia, Bódalo Márquez, Antonio, Grajal, Jesús
Format: Artikel
Sprache:eng
Schlagworte:
Amplifier design
Bandwidths
Broadband
Design
Electronic warfare
EuMW 2018
Gallium nitrides
Integrated circuits
Maximum power
MMIC (circuits)
Power amplifiers
Power efficiency
Pulse duration
Semiconductor devices
Transistors
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Zusammenfassung:A 6–18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 µm gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 µs pulse width.
ISSN:1759-0787
1759-0795
DOI:10.1017/S1759078719000503