Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers

Semiconductor devices based on silicon carbide play an important role as components for power electronic systems. Nowadays it's recognized that at least 50 percent of electricity distribution all over the world is controlled by such elements. It's also expected that within a decade, the power devices' share in electricity conversion will rise from today's 30 to 80 %. This will require next generation of energy-efficient devices for power electronics.