Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection
A heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2019-09, Vol.115 (12) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 12 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 115 |
| creator | Shao, Dali Zhu, Weiguang Xin, Guoqing Lian, Jie Sawyer, Shayla |
| description | A heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors. |
| doi_str_mv | 10.1063/1.5123226 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2291766508</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2291766508</sourcerecordid><originalsourceid>FETCH-LOGICAL-c389t-72476d79c330d7ebc9904805aa19d4180bd95360c32c74bd070f4f98e9cae1663</originalsourceid><addsrcrecordid>eNqdkE1PAyEQhonRxPpx8B8QPWlcy8cuLN600Wpi9KD1SlhgLbXCCtua_nupNfHuaTKZ552Z9wXgCKMLjBgd4osKE0oI2wIDjDgvKMb1NhgghGjBRIV3wV5Ks9xWhNIBWN37EN-UdxoulVZer4oQjY3WwM7GsEzvrrdwlMizH83Z5bUbjtUjnNo-D2cLr3sXPOymoQ_GBWNhGyL0Ksbw1ShvzuHSJdfMbdHMnTdw8gpNlv6oDsBOq-bJHv7WfTC5vXkZ3RUPT-P70dVDoWkt-oKTkjPDhaYUGW4bLQQqa1QphYUpcY0aIyrKkKZE87IxiKO2bEVthVYWM0b3wfFmb0i9k0lnP3qqg_f5DYkZJozxDJ1soC6Gz4VNvZyFRfT5L0mIwJyxCtWZOt1QOoaUom1lF92HiiuJkVzHL7H8jT-zZxt2fVGtDf8PXob4B8rOtPQbb5iTJQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2291766508</pqid></control><display><type>article</type><title>Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Shao, Dali ; Zhu, Weiguang ; Xin, Guoqing ; Lian, Jie ; Sawyer, Shayla</creator><creatorcontrib>Shao, Dali ; Zhu, Weiguang ; Xin, Guoqing ; Lian, Jie ; Sawyer, Shayla ; Rensselaer Polytechnic Inst., Troy, NY (United States) ; The Ohio State Univ., Columbus, OH (United States) ; Energy Frontier Research Centers (EFRC) (United States). Center for Performance and Design of Nuclear Waste Forms and Containers (WastePD)</creatorcontrib><description>A heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5123226</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Biomedical materials ; Bismuth ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Decibels ; Epitaxial growth ; Gallium nitrides ; Heterojunctions ; Heterostructures ; MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES ; Multi wall carbon nanotubes ; Nanoparticles ; Narrowband ; Perovskites ; Photodetectors ; Photodiodes ; Physics ; Spin coating ; Substrates</subject><ispartof>Applied physics letters, 2019-09, Vol.115 (12)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-72476d79c330d7ebc9904805aa19d4180bd95360c32c74bd070f4f98e9cae1663</citedby><cites>FETCH-LOGICAL-c389t-72476d79c330d7ebc9904805aa19d4180bd95360c32c74bd070f4f98e9cae1663</cites><orcidid>0000-0003-0007-9284 ; 0000-0002-8155-8115 ; 0000000300079284 ; 0000000281558115</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5123226$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,4498,27901,27902,76353</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1612667$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Shao, Dali</creatorcontrib><creatorcontrib>Zhu, Weiguang</creatorcontrib><creatorcontrib>Xin, Guoqing</creatorcontrib><creatorcontrib>Lian, Jie</creatorcontrib><creatorcontrib>Sawyer, Shayla</creatorcontrib><creatorcontrib>Rensselaer Polytechnic Inst., Troy, NY (United States)</creatorcontrib><creatorcontrib>The Ohio State Univ., Columbus, OH (United States)</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Center for Performance and Design of Nuclear Waste Forms and Containers (WastePD)</creatorcontrib><title>Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection</title><title>Applied physics letters</title><description>A heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.</description><subject>Applied physics</subject><subject>Biomedical materials</subject><subject>Bismuth</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Decibels</subject><subject>Epitaxial growth</subject><subject>Gallium nitrides</subject><subject>Heterojunctions</subject><subject>Heterostructures</subject><subject>MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES</subject><subject>Multi wall carbon nanotubes</subject><subject>Nanoparticles</subject><subject>Narrowband</subject><subject>Perovskites</subject><subject>Photodetectors</subject><subject>Photodiodes</subject><subject>Physics</subject><subject>Spin coating</subject><subject>Substrates</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqdkE1PAyEQhonRxPpx8B8QPWlcy8cuLN600Wpi9KD1SlhgLbXCCtua_nupNfHuaTKZ552Z9wXgCKMLjBgd4osKE0oI2wIDjDgvKMb1NhgghGjBRIV3wV5Ks9xWhNIBWN37EN-UdxoulVZer4oQjY3WwM7GsEzvrrdwlMizH83Z5bUbjtUjnNo-D2cLr3sXPOymoQ_GBWNhGyL0Ksbw1ShvzuHSJdfMbdHMnTdw8gpNlv6oDsBOq-bJHv7WfTC5vXkZ3RUPT-P70dVDoWkt-oKTkjPDhaYUGW4bLQQqa1QphYUpcY0aIyrKkKZE87IxiKO2bEVthVYWM0b3wfFmb0i9k0lnP3qqg_f5DYkZJozxDJ1soC6Gz4VNvZyFRfT5L0mIwJyxCtWZOt1QOoaUom1lF92HiiuJkVzHL7H8jT-zZxt2fVGtDf8PXob4B8rOtPQbb5iTJQ</recordid><startdate>20190916</startdate><enddate>20190916</enddate><creator>Shao, Dali</creator><creator>Zhu, Weiguang</creator><creator>Xin, Guoqing</creator><creator>Lian, Jie</creator><creator>Sawyer, Shayla</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0003-0007-9284</orcidid><orcidid>https://orcid.org/0000-0002-8155-8115</orcidid><orcidid>https://orcid.org/0000000300079284</orcidid><orcidid>https://orcid.org/0000000281558115</orcidid></search><sort><creationdate>20190916</creationdate><title>Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection</title><author>Shao, Dali ; Zhu, Weiguang ; Xin, Guoqing ; Lian, Jie ; Sawyer, Shayla</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-72476d79c330d7ebc9904805aa19d4180bd95360c32c74bd070f4f98e9cae1663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Biomedical materials</topic><topic>Bismuth</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Decibels</topic><topic>Epitaxial growth</topic><topic>Gallium nitrides</topic><topic>Heterojunctions</topic><topic>Heterostructures</topic><topic>MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES</topic><topic>Multi wall carbon nanotubes</topic><topic>Nanoparticles</topic><topic>Narrowband</topic><topic>Perovskites</topic><topic>Photodetectors</topic><topic>Photodiodes</topic><topic>Physics</topic><topic>Spin coating</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shao, Dali</creatorcontrib><creatorcontrib>Zhu, Weiguang</creatorcontrib><creatorcontrib>Xin, Guoqing</creatorcontrib><creatorcontrib>Lian, Jie</creatorcontrib><creatorcontrib>Sawyer, Shayla</creatorcontrib><creatorcontrib>Rensselaer Polytechnic Inst., Troy, NY (United States)</creatorcontrib><creatorcontrib>The Ohio State Univ., Columbus, OH (United States)</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Center for Performance and Design of Nuclear Waste Forms and Containers (WastePD)</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shao, Dali</au><au>Zhu, Weiguang</au><au>Xin, Guoqing</au><au>Lian, Jie</au><au>Sawyer, Shayla</au><aucorp>Rensselaer Polytechnic Inst., Troy, NY (United States)</aucorp><aucorp>The Ohio State Univ., Columbus, OH (United States)</aucorp><aucorp>Energy Frontier Research Centers (EFRC) (United States). Center for Performance and Design of Nuclear Waste Forms and Containers (WastePD)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection</atitle><jtitle>Applied physics letters</jtitle><date>2019-09-16</date><risdate>2019</risdate><volume>115</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5123226</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-0007-9284</orcidid><orcidid>https://orcid.org/0000-0002-8155-8115</orcidid><orcidid>https://orcid.org/0000000300079284</orcidid><orcidid>https://orcid.org/0000000281558115</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2019-09, Vol.115 (12) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_journals_2291766508 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Biomedical materials Bismuth CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Decibels Epitaxial growth Gallium nitrides Heterojunctions Heterostructures MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES Multi wall carbon nanotubes Nanoparticles Narrowband Perovskites Photodetectors Photodiodes Physics Spin coating Substrates |
| title | Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T14%3A01%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Inorganic%20vacancy-ordered%20perovskite%20Cs2SnCl6:Bi/GaN%20heterojunction%20photodiode%20for%20narrowband,%20visible-blind%20UV%20detection&rft.jtitle=Applied%20physics%20letters&rft.au=Shao,%20Dali&rft.aucorp=Rensselaer%20Polytechnic%20Inst.,%20Troy,%20NY%20(United%20States)&rft.date=2019-09-16&rft.volume=115&rft.issue=12&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.5123226&rft_dat=%3Cproquest_scita%3E2291766508%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2291766508&rft_id=info:pmid/&rfr_iscdi=true |