The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping

The effect of aluminum gettering (AlG) procedures and thermal treatments on the temperature dependence of the photoluminescence of dislocation structures in silicon formed by Si+ ion implantation and modified by boron ion doping with various doses is investigated. It is shown that the temperature dependence of the D1 line intensity of dislocation‐related luminescence undergoes radical changes as a result of both AlG and thermal treatments at identical regimes. After AlG, the shape of the temperature dependence of the D1 line intensity does not depend on the dose of implanted boron, and a continuous strong increase in the luminescence intensity from 6 to 90–100 K is observed, forming a maximum on the temperature dependence curve. In the case of identical heat treatments of samples (without deposition of the Al film), the correlation is found between the position of the high‐temperature luminescence maximum and the concentration of the implanted boron, namely, its shift to higher temperatures with increasing boron content. A possible mechanism of the observed anomalous behavior of luminescence is discussed. The temperature dependence of dislocation‐related photoluminescence in silicon samples with dislocations created by self‐ion implantation with subsequent annealing and additional boron doping, is investigated. Aluminum gettering and identical heat treatments make it possible to significantly improve luminescence temperature dependence and ensure the maintenance of dislocation‐related luminescence up to 270 K. The observed effect is clearly associated with boron doping.