K+ intercalated V2O5 nanorods with exposed facets as advanced cathodes for high energy and high rate zinc-ion batteries
Aqueous rechargeable zinc-ion batteries (ARZIBs) have drawn enormous attention because of their low-cost and eco-friendly cell components. However, designing high-performance cathode materials towards practical application of ARZIBs remains a major challenge. Therefore, in this contribution, a compr...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2019, Vol.7 (35), p.20335-20347 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Aqueous rechargeable zinc-ion batteries (ARZIBs) have drawn enormous attention because of their low-cost and eco-friendly cell components. However, designing high-performance cathode materials towards practical application of ARZIBs remains a major challenge. Therefore, in this contribution, a comprehensive study on K+ intercalated V2O5 (KVO) nanorods with exposed facets as a high-performance cathode for ARZIBs is presented. The KVO cathode exhibits remarkable discharge capacities of 439 and 286 mAh g−1 at current densities of 50 and 3000 mA g−1, respectively. Furthermore, it recovers 96% of the capacity after 1500 cycles at 8000 mA g−1. Impressively, the Zn/KVO battery offers a specific energy of 121 W h kg−1 at high specific power of 6480 W kg−1. The storage mechanism of the KVO cathode in an ARZIB is systematically elucidated using in operando synchrotron X-ray diffraction, ex situ synchrotron X-ray absorption spectroscopy, ex situ TEM analyses and first-principles calculations. The superior performance of the cathode is attributed to its unique exposed layer structure with high surface energy, high conductivity and low migration barrier for Zn2+ migration. This study provides insight into designing high-performance cathode materials for ARZIBs and other electrochemical systems. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/c9ta05767f |