Tribological Characteristics of Oxide Layer Formed on TiN Coated Silicon Wafer
The effects of the oxide layer formed on the wear tracks of a titanium nitride (TiN) coated silicon wafer on friction and wear characteristics were investigated. Silicon wafers were used as the substrate of coated disk specimens, which were prepared by depositing TiN coating with 1.74 μm in coating...
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Veröffentlicht in: | Tribology letters 2004-05, Vol.16 (4), p.259-263 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effects of the oxide layer formed on the wear tracks of a titanium nitride (TiN) coated silicon wafer on friction and wear characteristics were investigated. Silicon wafers were used as the substrate of coated disk specimens, which were prepared by depositing TiN coating with 1.74 μm in coating thickness using the arc ion-plating method. SAE 52100 steel balls were used as the counter-faces. The tests were performed both in air for forming an oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports the characterization of the oxide layer and its effects on friction and wear characteristics using Auger electron spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The TiN coating with the oxides shows relatively high friction compared to that without an oxide layer. The thickness of the layer formed on the surfaces of the TiN coated silicon wafer is very thin compared to the thickness of the TiN coating. The oxide layer dominates the frictional characteristics between the two materials and induces a relative high friction. |
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ISSN: | 1023-8883 1573-2711 |
DOI: | 10.1023/B:TRIL.0000015201.11935.e6 |