Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions

Activation energies for the regeneration of BO-LID differ strongly in literature. Two possible reasons, among others, are suspected to cause this spread in published data. On the one hand, ignoring the injection dependence of the reactions might lead to varying results. On the other hand, the parallel occurrence of LeTID might play a role. While the first reason is eliminated within this contribution by keeping injection constant during the degradation and regeneration treatment, LeTID is indeed found to occur and impact the degradation and regeneration in Cz-Si as can be seen from extracted defect densities and injection-dependent lifetime data. In FZ-Si which is supposed to suffer from LeTID only, activation energy for degradation and regeneration was determined to be Ea,deg = 0.78 ± 0.09 eV and Ea,reg = 0.62 ± 0.09 eV independent of firing temperature. For Cz-Si, activation energy of degradation is found to depend slightly on firing temperature, probably due to the superposition of BO-LID with LeTID. Activation energy of regeneration of both, FZ-Si and Cz-Si, is found to be the same within uncertainty. The results furthermore suggest that the superposition of BO-LID and LeTID is not responsible for the broad range of published activation energies.