GaAs subcell of triple-junction solar cells with hybrid quantum objects: Temperature photovoltaic characteristics

The temperature characteristics of GaAs solar cells with 0, 1, 5, 10 and 15 rows of GaInAs quantum objects have been investigated. Introducing of quantum objects into GaAs p-n junction leads to open circuit voltage drop due to the changing recombination transition energy from GaAs energy gap value to the effective one (Egeff = EgGaAs − ΔEg). It has been experimentally shown that Egeff is increasing with quantum object rows number. The dependences of photogenerated current and ΔEg on the number of quantum object rows have been obtained. Both dependences have been described by linear approximation. Using such dependencies it is possible to construct IV-curves and other photovoltaic characteristics for GaAs solar cells with any number of GaInAs quantum object rows.