Fabrication of (Tb,Gd)3Al5O12:Ce3+ phosphor ceramics for warm white light-emitting diodes application

(Tb,Gd)3Al5O12: Ce3+ (Ce: TGAG) transparent phosphor ceramics with different concentrations of Gd-doping were fabricated for the first time through a solid state reaction. The maximum emission peak of Ce3+ shifts from 550 nm to 570 nm in Ce:TGAG and the emission intensity of Ce3+ was also greatly increased. With an increasing red component in fluorescence spectrum, a low color correlated temperature (CCT) of 3681 K and a high color-rendering index (CRI) of 74.7 were obtained in the packed LED device based on InGaN chips and Ce:TGAG ceramics at the Gd-doping concentration of 30%, which indicates the great potential of Ce:TGAG ceramics in the application of warm white light illumination.