Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors

As continued silicon scaling is becoming increasingly challenging, emerging nanotechnologies such as carbon nanotubes (CNTs) are being explored. However, experimental measurements of CNT Field-Effect Transistors (CNFETs) often exhibit substantial off-state leakage current (IOFF), resulting in increa...

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Veröffentlicht in:	Applied physics letters 2019-08, Vol.115 (6)
Hauptverfasser:	Srimani, T., Hills, G., Zhao, X., Antoniadis, D., del Alamo, J. A., Shulaker, M. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Asymmetry Carbon nanotubes Field effect transistors Leakage current Nanomaterials Power efficiency Semiconductor devices Transistors
Online-Zugang:	Volltext
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