The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

This study prepared an SiC thin film by using the ratio frequency magnetron sputtering method, investigated the effects of different sputtering powers on the SiC material and analysed the changes in crystal morphology and photoluminescence characteristics caused by changes in the growth conditions u...

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Veröffentlicht in:Solid state phenomena 2019-08, Vol.295, p.93-97
Hauptverfasser: Zhao, Man, Zhao, Chang, Lv, Su Ye, Xing, Guang Jian, Liu, Qing Jun
Format: Artikel
Sprache:eng
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Zusammenfassung:This study prepared an SiC thin film by using the ratio frequency magnetron sputtering method, investigated the effects of different sputtering powers on the SiC material and analysed the changes in crystal morphology and photoluminescence characteristics caused by changes in the growth conditions used. It was considered that there was 6H-SiC crystal morphologies in the SiC thin film under the experimental conditions prevailing in this study. The SiC morphologies with small grain sizes intermingled and therefore formed anSiC thin film. The analyses of the photoluminescence spectra and Scanning Electron Microscope indicated that the SiC thin film materials with preferable crystal compositions could be prepared under appropriate power inputs.
ISSN:1012-0394
1662-9779
1662-9779
DOI:10.4028/www.scientific.net/SSP.295.93