Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V 2 O 5 and MnO 2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage ( I...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019-08, Vol.53 (8), p.1054-1059 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V
2
O
5
and MnO
2
nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (
I
–
V
) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V
2
O
5
facilitates the more intense (in comparison with MnO
2
) chemical bonding of arsenic at the internal interface with the formation of As
2
O
5
. As a result, thermally oxidized V
2
O
5
/GaAs heterostructures exhibit higher breakdown voltages. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782619080177 |