Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition

We report design, growth, and characterization of midwavelength infrared nBn photodetectors based on a type-II InAs/InAs1-xSbx superlattice on a GaSb substrate grown by metal-organic chemical vapor deposition. An InAs/AlAs1-ySby/InAs/InAs1-xSbx superlattice design was used as the large bandgap elect...

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Veröffentlicht in:	Applied physics letters 2019-08, Vol.115 (6)
Hauptverfasser:	Wu, Donghai, Dehzangi, Arash, Razeghi, Manijeh
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bias Chemical vapor deposition Cut off wavelength Dark current Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Photometers Plasma Quantum efficiency Substrates Superlattices
Online-Zugang:	Volltext
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