Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition

We report design, growth, and characterization of midwavelength infrared nBn photodetectors based on a type-II InAs/InAs1-xSbx superlattice on a GaSb substrate grown by metal-organic chemical vapor deposition. An InAs/AlAs1-ySby/InAs/InAs1-xSbx superlattice design was used as the large bandgap elect...

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Veröffentlicht in:Applied physics letters 2019-08, Vol.115 (6)
Hauptverfasser: Wu, Donghai, Dehzangi, Arash, Razeghi, Manijeh
Format: Artikel
Sprache:eng
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Zusammenfassung:We report design, growth, and characterization of midwavelength infrared nBn photodetectors based on a type-II InAs/InAs1-xSbx superlattice on a GaSb substrate grown by metal-organic chemical vapor deposition. An InAs/AlAs1-ySby/InAs/InAs1-xSbx superlattice design was used as the large bandgap electron barrier in the photodetectors. At 150 K, the photodetector exhibits a peak responsivity of 1.23 A/W, corresponding to a quantum efficiency of 41% at an applied bias voltage of −100 mV under front-side illumination, with a 50% cut-off wavelength of 4.6 μm. With an R × A of 356 Ω cm2 and a dark current density of 1.6 × 10−4 A/cm2 under an applied bias of −100 mV at 150 K, the photodetector exhibits a specific detectivity of 1.4 × 1011 cm Hz1/2/W.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5100617